Xinlian Power raises nearly RMB2 billion for compound power semiconductors
Designs, manufactures and packages silicon-carbide and gallium-nitride power devices for electric vehicles, renewable energy and industrial power systems. These chips switch and convert electrical power; the materials can handle higher voltages and frequencies with lower losses than conventional silicon in suitable applications. The controlled subsidiary of listed UNT disclosed nearly RMB2 billion in Series C financing led by China Mobile's chain-leader fund. It is expanding into AI-server power systems; 3300V devices remain in customer validation and 6.5kV-plus products are in R&D.
DTT summary based on Sina Technology's report. The full article is on the publisher's site.
Additional reporting
Nearly RMB2 billion Series C, disclosed November 2, 2026, after a recent close. Reported post-round valuation: US$2 billion. No currency conversion is used to restate the financing amount.
China Mobile chain-leader fund (中国移动链长基金) led. Reported participants: 浪潮信息, 元璟资本, 中石化氢能基金, 北方华创诺华资本, 江丰电子, 常州星宇, 凯辉基金, 普超资本, 建信股权, 中信金石, 中信证券, 银河源汇. Original Chinese names are retained where the exact English brand or investment vehicle is not confirmed.
Xinlian Power Technology (Shaoxing), 芯联动力科技（绍兴）有限公司, was established in 2023 as a controlled subsidiary of listed parent 芯联集成 (UNT, 688469.SH), with automotive and energy industry investors. This is subsidiary financing, not financing of a newly independent startup.
Designs, manufactures and packages silicon-carbide and gallium-nitride power devices for electric vehicles, renewable energy and industrial power systems. These chips switch and convert electrical power; the materials can handle higher voltages and frequencies with lower losses than conventional silicon in suitable applications.
Reports describe eight-inch silicon-carbide manufacturing using the parent's established wafer-process platform. Wafer manufacturing and module packaging are distinct parts of its offering. Parent-wide analog IC, silicon-photonics and other production capacities are not treated as Xinlian Power assets here.
June technical materials describe a 3300V SiC MOSFET based on an eight-inch high-voltage planar-gate process, with samples sent to core customers for validation. MOSFET means a transistor used here as an electrical power switch. Customer sampling is not volume deployment in AI data centers.
November reporting describes a 650V to 3300V product range, with 6.5kV and higher devices still in research and development.
The company is expanding from automotive power devices toward AI-server power supplies and solid-state transformers. A solid-state transformer uses power electronics for voltage conversion. This is a stated growth strategy, not evidence of named hyperscaler orders.
The company reports potential system bill-of-materials cost reductions of 20% to 35% for solutions using the 3300V device. This is a company-reported system claim, not an independently tested chip benchmark or a guaranteed customer saving.
Earlier rounds included automotive and renewable-energy industry investors. Their prior participation is not counted as participation in this Series C. A reconciled cumulative financing total is not disclosed here.
